| MRC |
Requirement Statement |
Characteristics |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CBBL |
FEATURES PROVIDED |
STATIC OPERATION AND HIGH PERFORMANCE AND PROGRAMMABLE AND 3-STATE OUTPUT |
| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CQZP |
INPUT CIRCUIT PATTERN |
13 INPUT |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.0 WATTS |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| AFJQ |
STORAGE TEMP RANGE |
-65.0 TO 150.0 DEG CELSIUS |
| CZEQ |
TIME RATING PER CHACTERISTIC |
450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CQWX |
OUTPUT LOGIC FORM |
N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| ADAT |
BODY WIDTH |
0.560 INCHES MAXIMUM |
| ADAQ |
BODY LENGTH |
1.290 INCHES MAXIMUM |
| ADAU |
BODY HEIGHT |
0.170 INCHES MAXIMUM |
| CZER |
MEMORY DEVICE TYPE |
ROM |
| AFGA |
OPERATING TEMP RANGE |
0.0 TO 70.0 DEG CELSIUS |
